APTM50DUM35TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Number of Pins :

4

ECCN Code :

EAR99

Case Connection :

Isolated

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

12

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

93 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

Pbfree Code :

yes

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

75 ns

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Bulk

Rise Time :

38ns

Power Dissipation :

781W

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 5mA

Package / Case :

SP4

Factory Lead Time :

22 Weeks

DS Breakdown Voltage-Min :

500V

Max Power Dissipation :

781W

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

396A

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Continuous Drain Current (ID) :

99A

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Pin Count :

12

Drain-source On Resistance-Max :

0.039Ohm

Terminal Form :

UNSPECIFIED

Terminal Finish :

TIN SILVER COPPER

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V