APTM50DUM19G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Max Power Dissipation :

1.136kW

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 81.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 10mA

Number of Elements :

2

Gate to Source Voltage (Vgs) :

30V

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-XUFM-X7

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

FET Feature :

Standard

Package / Case :

SP6

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Continuous Drain Current (ID) :

163A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

7

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~150°C TJ

Power - Max :

1136W

Number of Terminations :

7

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

6