APTM50DUM17G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

180A

Power - Max :

1250W

Number of Terminations :

7

Turn On Delay Time :

21 ns

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

93 ns

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

JESD-30 Code :

R-XUFM-X7

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

20m Ω @ 90A, 10V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Max Power Dissipation :

1.25kW

Packaging :

Bulk

Power Dissipation :

1.25kW

Pin Count :

7

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Rise Time :

38ns

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

Mount :

Chassis Mount, Screw

FET Feature :

Standard

Turn-Off Delay Time :

75 ns

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Package / Case :

SP6

Number of Elements :

2

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Factory Lead Time :

22 Weeks

Vgs(th) (Max) @ Id :

5V @ 10mA

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

3000 mJ

Mounting Type :

Chassis Mount

Number of Pins :

6

Radiation Hardening :

No