APTM50DHM75TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Number of Pins :

4

Packaging :

Bulk

FET Feature :

Standard

Number of Terminations :

14

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Chassis Mount

Published :

2016

FET Type :

2 N-Channel (Dual) Asymmetrical

Power Dissipation :

357W

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Pin Count :

14

DS Breakdown Voltage-Min :

500V

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.09Ohm

Max Power Dissipation :

357W

JESD-609 Code :

e1

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Package / Case :

SP4

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

46A