APTM50DHM65TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Pin Count :

14

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

51A

Packaging :

Bulk

Mounting Type :

Chassis Mount

Vgs(th) (Max) @ Id :

5V @ 2.5mA

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Operating Temperature :

-40°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

390W

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

390W

DS Breakdown Voltage-Min :

500V

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Drain to Source Voltage (Vdss) :

500V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.078Ohm

Number of Terminations :

14

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Package / Case :

SP4

Terminal Position :

UPPER