APTM50DHM35G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 5mA

RoHS Status :

RoHS Compliant

Rise Time :

38ns

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

3000 mJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

99A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Turn-Off Delay Time :

75 ns

Pin Count :

8

Drain-source On Resistance-Max :

0.039Ohm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

21 ns

Published :

2006

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

781W

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-XUFM-X8

Fall Time (Typ) :

93 ns

Number of Terminations :

8

Packaging :

Bulk

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Max Power Dissipation :

781W

DS Breakdown Voltage-Min :

500V

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual) Asymmetrical

Package / Case :

SP6

Terminal Position :

UPPER

Number of Elements :

2

JESD-609 Code :

e1