APTM50DHM35G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-30 Code :

R-XUFM-X8

Fall Time (Typ) :

93 ns

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 5mA

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

99A

Number of Pins :

6

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

DS Breakdown Voltage-Min :

500V

Pbfree Code :

yes

Power Dissipation :

781W

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

Number of Elements :

2

Transistor Application :

SWITCHING

Max Power Dissipation :

781W

Turn On Delay Time :

21 ns

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

Published :

2006

Package / Case :

SP6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.039Ohm

Transistor Element Material :

SILICON

Rise Time :

38ns

FET Type :

2 N-Channel (Dual) Asymmetrical

JESD-609 Code :

e1

Pin Count :

8

Mounting Type :

Chassis Mount

Number of Terminations :

8

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Radiation Hardening :

No