APTM50DDA10T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

25

Terminal Position :

UPPER

Power Dissipation :

312W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4367pF @ 25V

Drain to Source Voltage (Vdss) :

500V

Radiation Hardening :

No

DS Breakdown Voltage-Min :

500V

Number of Pins :

3

Turn On Delay Time :

15 ns

Terminal Form :

UNSPECIFIED

Published :

2006

Avalanche Energy Rating (Eas) :

1600 mJ

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

140A

ECCN Code :

EAR99

Rise Time :

21ns

Transistor Element Material :

SILICON

Max Power Dissipation :

312W

Number of Elements :

2

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Pin Count :

25

Continuous Drain Current (ID) :

37A

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

120m Ω @ 18.5A, 10V

FET Feature :

Standard

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

73 ns

Vgs(th) (Max) @ Id :

5V @ 1mA

Pbfree Code :

yes

Mount :

Chassis Mount, Screw

Package / Case :

SP3

Fall Time (Typ) :

52 ns

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant