APTM50AM70FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

12

Transistor Element Material :

SILICON

Max Power Dissipation :

390W

Pin Count :

12

Drain to Source Voltage (Vdss) :

500V

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Unknown

Terminal Form :

UNSPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Number of Pins :

1

Package / Case :

SP1

FET Type :

2 N-Channel (Half Bridge)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Power Dissipation :

390W

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

50A

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

DS Breakdown Voltage-Min :

500V

Published :

2007

Number of Elements :

2

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

84m Ω @ 42A, 10V

Drain-source On Resistance-Max :

0.08Ohm

Operating Temperature :

-40°C~150°C TJ