APTM50AM38STG
- Mfr.Part #
- APTM50AM38STG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET 2N-CH 500V 90A SP4
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -40°C~150°C TJ
- Transistor Application :
- SWITCHING
- Mount :
- Chassis Mount, Screw
- Mounting Type :
- Chassis Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 11200pF @ 25V
- Fall Time (Typ) :
- 77 ns
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 18 ns
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 246nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 45A, 10V
- FET Feature :
- Standard
- Pin Count :
- 10
- FET Type :
- 2 N-Channel (Half Bridge)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Package / Case :
- SP4
- Turn-Off Delay Time :
- 87 ns
- Number of Terminations :
- 10
- Packaging :
- Bulk
- Factory Lead Time :
- 16 Weeks
- Pbfree Code :
- yes
- Max Power Dissipation :
- 694W
- Power Dissipation :
- 694W
- Pulsed Drain Current-Max (IDM) :
- 360A
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 90A
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Additional Feature :
- AVALANCHE ENERGY RATED
- DS Breakdown Voltage-Min :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-30 Code :
- R-XUFM-X10
- Number of Elements :
- 2
- Rise Time :
- 35ns
- Datasheets
- APTM50AM38STG

APTM50AM38STG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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