APTM50AM38STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

90A

Number of Pins :

4

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Max Power Dissipation :

694W

Vgs(th) (Max) @ Id :

5V @ 5mA

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

RoHS Compliant

Number of Terminations :

10

JESD-30 Code :

R-XUFM-X10

DS Breakdown Voltage-Min :

500V

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

360A

Package / Case :

SP4

Packaging :

Bulk

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

FET Feature :

Standard

Additional Feature :

AVALANCHE ENERGY RATED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Half Bridge)

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Turn-Off Delay Time :

87 ns

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Radiation Hardening :

No

JESD-609 Code :

e1

Pin Count :

10

Rise Time :

35ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

694W

Fall Time (Typ) :

77 ns

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Case Connection :

Isolated

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR