APTM50AM38SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

694W

Rise Time :

35ns

FET Type :

2 N-Channel (Half Bridge)

Pulsed Drain Current-Max (IDM) :

360A

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Published :

1997

Number of Elements :

2

Number of Terminations :

10

Fall Time (Typ) :

77 ns

Drain-source On Resistance-Max :

0.038Ohm

Vgs(th) (Max) @ Id :

5V @ 5mA

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

90A

Turn-Off Delay Time :

87 ns

FET Feature :

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss) :

500V

Package / Case :

SP4

Mounting Type :

Chassis Mount

Case Connection :

Isolated

Number of Pins :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Pin Count :

10

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Power Dissipation :

694W

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

DS Breakdown Voltage-Min :

500V

Transistor Application :

SWITCHING

JESD-30 Code :

R-XUFM-X10

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR