APTM50AM38SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-XUFM-X10

DS Breakdown Voltage-Min :

500V

FET Type :

2 N-Channel (Half Bridge)

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

4

Published :

1997

FET Feature :

Silicon Carbide (SiC)

Max Power Dissipation :

694W

Drain-source On Resistance-Max :

0.038Ohm

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

ECCN Code :

EAR99

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

10

Pin Count :

10

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

360A

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Turn On Delay Time :

18 ns

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Power Dissipation :

694W

Turn-Off Delay Time :

87 ns

Fall Time (Typ) :

77 ns

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

5V @ 5mA

Package / Case :

SP4

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Packaging :

Bulk

Rise Time :

35ns