APTM50AM38FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SP4

Factory Lead Time :

36 Weeks

JESD-609 Code :

e1

Rise Time :

35ns

Mount :

Chassis Mount, Screw

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 5mA

Number of Terminations :

12

Pulsed Drain Current-Max (IDM) :

360A

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Drain-source On Resistance-Max :

0.038Ohm

Number of Pins :

4

Mounting Type :

Chassis Mount

Max Power Dissipation :

694W

Power Dissipation :

694W

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Pin Count :

12

Turn On Delay Time :

18 ns

Series :

POWER MOS 7®

Fall Time (Typ) :

77 ns

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

Published :

2006

Turn-Off Delay Time :

87 ns

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

FET Type :

2 N-Channel (Half Bridge)

Terminal Position :

UPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Operating Temperature :

-40°C~150°C TJ