APTM50AM38FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Max Power Dissipation :

694W

Pulsed Drain Current-Max (IDM) :

360A

Radiation Hardening :

No

Fall Time (Typ) :

77 ns

Package / Case :

SP4

DS Breakdown Voltage-Min :

500V

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Series :

POWER MOS 7®

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

87 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

36 Weeks

Published :

2006

Number of Pins :

4

Terminal Position :

UPPER

JESD-609 Code :

e1

Number of Terminations :

12

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Rise Time :

35ns

Terminal Form :

UNSPECIFIED

Pin Count :

12

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

18 ns

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Power Dissipation :

694W

FET Feature :

Standard

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.038Ohm

Continuous Drain Current (ID) :

90A

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V