APTM50AM35FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

12

DS Breakdown Voltage-Min :

500V

Mount :

Chassis Mount, Screw

Fall Time (Typ) :

93 ns

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Power Dissipation :

781W

Case Connection :

Isolated

Max Power Dissipation :

781W

Drain-source On Resistance-Max :

0.035Ohm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

21 ns

FET Type :

2 N-Channel (Half Bridge)

Number of Pins :

4

Mounting Type :

Chassis Mount

Rise Time :

38ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

396A

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Turn-Off Delay Time :

75 ns

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 5mA

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP4

JESD-609 Code :

e1

Continuous Drain Current (ID) :

99A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Drain to Source Voltage (Vdss) :

500V

Published :

2006

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

12

Radiation Hardening :

No

Pbfree Code :

yes

Factory Lead Time :

36 Weeks

Transistor Element Material :

SILICON

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

3000 mJ