APTM50AM25FTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-40°C~150°C TJ

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

1200nC @ 10V

JESD-30 Code :

R-XUFM-X15

Mount :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

1300 mJ

Number of Terminations :

15

Operating Mode :

ENHANCEMENT MODE

Power - Max :

1250W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Half Bridge)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

149A

Drain-source On Resistance-Max :

0.025Ohm

Number of Pins :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Package / Case :

SP4

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Pbfree Code :

yes

Max Power Dissipation :

1.25kW

Vgs(th) (Max) @ Id :

4V @ 8mA

Case Connection :

Isolated

Terminal Position :

UPPER

Input Capacitance (Ciss) (Max) @ Vds :

29600pF @ 25V

Published :

2009

JESD-609 Code :

e1

Packaging :

Bulk

Pin Count :

15

Rds On (Max) @ Id, Vgs :

25m Ω @ 74.5A, 10V

Terminal Form :

UNSPECIFIED