APTM50AM24SG
- Mfr.Part #
- APTM50AM24SG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 500V 150A SP6
- Stock
- 8,841
- In Stock :
- 8,841
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 2
- Drain to Source Voltage (Vdss) :
- 500V
- Power - Max :
- 1250W
- Mounting Type :
- Chassis Mount
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 19600pF @ 25V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 41 ns
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Chassis Mount, Screw
- Published :
- 1999
- Packaging :
- Bulk
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 50 ns
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 7
- Operating Temperature :
- -40°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 75A, 10V
- Package / Case :
- SP6
- Terminal Position :
- UPPER
- Factory Lead Time :
- 16 Weeks
- Pulsed Drain Current-Max (IDM) :
- 600A
- FET Feature :
- Standard
- Max Power Dissipation :
- 1.25kW
- Continuous Drain Current (ID) :
- 150A
- Avalanche Energy Rating (Eas) :
- 1300 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 7
- Gate Charge (Qg) (Max) @ Vgs :
- 434nC @ 10V
- Radiation Hardening :
- No
- FET Type :
- 2 N-Channel (Half Bridge)
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Terminal Finish :
- TIN SILVER COPPER
- DS Breakdown Voltage-Min :
- 500V
- Vgs(th) (Max) @ Id :
- 5V @ 6mA
- Rise Time :
- 17ns
- Power Dissipation :
- 1.25kW
- Datasheets
- APTM50AM24SG
APTM50AM24SG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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