APTM50AM19FG
- Mfr.Part #
- APTM50AM19FG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 500V 163A SP6
- Stock
- 43,896
- In Stock :
- 43,896
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Feature :
- Standard
- Mount :
- Chassis Mount, Screw
- JESD-30 Code :
- R-XUFM-X7
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- JESD-609 Code :
- e1
- Fall Time (Typ) :
- 77 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.019Ohm
- Number of Elements :
- 2
- Pin Count :
- 7
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 81.5A, 10V
- Continuous Drain Current (ID) :
- 163A
- Published :
- 2006
- Number of Terminations :
- 7
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 22400pF @ 25V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 492nC @ 10V
- Operating Temperature :
- -40°C~150°C TJ
- FET Type :
- 2 N-Channel (Half Bridge)
- Package / Case :
- SP6
- Terminal Finish :
- TIN SILVER COPPER
- Rise Time :
- 35ns
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Terminal Form :
- UNSPECIFIED
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Turn-Off Delay Time :
- 87 ns
- Max Power Dissipation :
- 1.136kW
- Turn On Delay Time :
- 18 ns
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 30V
- Power - Max :
- 1136W
- Factory Lead Time :
- 36 Weeks
- RoHS Status :
- RoHS Compliant
- Datasheets
- APTM50AM19FG
APTM50AM19FG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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