APTM50AM19FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

Max Power Dissipation :

1.136kW

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Number of Pins :

6

Turn-Off Delay Time :

87 ns

Pbfree Code :

yes

FET Type :

2 N-Channel (Half Bridge)

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

7

Fall Time (Typ) :

77 ns

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Drain-source On Resistance-Max :

0.019Ohm

Published :

2006

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-XUFM-X7

JESD-609 Code :

e1

Power - Max :

1136W

Terminal Form :

UNSPECIFIED

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

18 ns

Pin Count :

7

Continuous Drain Current (ID) :

163A

Factory Lead Time :

36 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

35ns

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 81.5A, 10V

Package / Case :

SP6

Vgs(th) (Max) @ Id :

5V @ 10mA