APTM50AM19FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Continuous Drain Current (ID) :

163A

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Power - Max :

1136W

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 81.5A, 10V

Transistor Element Material :

SILICON

Package / Case :

SP6

Fall Time (Typ) :

77 ns

Terminal Position :

UPPER

Rise Time :

35ns

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

36 Weeks

Number of Elements :

2

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

FET Feature :

Standard

Max Power Dissipation :

1.136kW

Number of Terminations :

7

Mounting Type :

Chassis Mount

Vgs(th) (Max) @ Id :

5V @ 10mA

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

87 ns

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

Published :

2006

Drain-source On Resistance-Max :

0.019Ohm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

18 ns

Pin Count :

7

DS Breakdown Voltage-Min :

500V

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-XUFM-X7