APTM50AM17FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.017Ohm

Packaging :

Bulk

Max Power Dissipation :

1.25kW

FET Type :

2 N-Channel (Half Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Pin Count :

7

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 10mA

Number of Elements :

2

Case Connection :

Isolated

Published :

2006

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

180A

Operating Temperature :

-40°C~150°C TJ

Pbfree Code :

yes

FET Feature :

Standard

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Power Dissipation :

1.25kW

Factory Lead Time :

36 Weeks

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

93 ns

Avalanche Energy Rating (Eas) :

3000 mJ

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

20m Ω @ 90A, 10V

JESD-30 Code :

R-XUFM-X7

JESD-609 Code :

e1

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

500V

RoHS Status :

RoHS Compliant

Rise Time :

38ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

75 ns

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

7

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SP6

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Turn On Delay Time :

21 ns

Power - Max :

1250W