APTM20HM20STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

99 ns

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

2500 mJ

Radiation Hardening :

No

Turn-Off Delay Time :

81 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

4 N-Channel (H-Bridge)

Mounting Type :

Chassis Mount

Transistor Application :

SWITCHING

Rise Time :

56ns

Pin Count :

14

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

24m Ω @ 44.5A, 10V

Number of Terminations :

14

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

357W

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

89A

Drain to Source Voltage (Vdss) :

200V

Pulsed Drain Current-Max (IDM) :

356A

Max Power Dissipation :

357W

Package / Case :

SP4

Mount :

Chassis Mount, Screw

FET Feature :

Standard

Pbfree Code :

yes

Published :

1999

Turn On Delay Time :

28 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

ECCN Code :

EAR99

Number of Elements :

4

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

200V

Number of Pins :

4

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V