APTM20HM20FTG
- Mfr.Part #
- APTM20HM20FTG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET 4N-CH 200V 89A SP4
- Stock
- 33,374
- In Stock :
- 33,374
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Finish :
- TIN SILVER COPPER
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 44.5A, 10V
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 6850pF @ 25V
- Max Power Dissipation :
- 357W
- Continuous Drain Current (ID) :
- 89A
- DS Breakdown Voltage-Min :
- 200V
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Rise Time :
- 56ns
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Turn-Off Delay Time :
- 81 ns
- Number of Elements :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- UNSPECIFIED
- Drain to Source Voltage (Vdss) :
- 200V
- Pulsed Drain Current-Max (IDM) :
- 356A
- Number of Terminations :
- 14
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Factory Lead Time :
- 36 Weeks
- Published :
- 2014
- Turn On Delay Time :
- 28 ns
- Terminal Position :
- UPPER
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Operating Temperature :
- -40°C~150°C TJ
- Fall Time (Typ) :
- 99 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 357W
- Pin Count :
- 14
- Package / Case :
- SP4
- Radiation Hardening :
- No
- FET Type :
- 4 N-Channel (H-Bridge)
- Mount :
- Chassis Mount, Screw
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- FET Feature :
- Standard
- Datasheets
- APTM20HM20FTG
APTM20HM20FTG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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