APTM20HM16FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

3000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation :

390W

Terminal Form :

UNSPECIFIED

Operating Temperature :

-40°C~150°C TJ

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

4 N-Channel (H-Bridge)

Max Power Dissipation :

390W

Turn-Off Delay Time :

88 ns

Mount :

Chassis Mount, Screw

Number of Elements :

4

Rds On (Max) @ Id, Vgs :

19m Ω @ 52A, 10V

Number of Pins :

4

Number of Terminations :

14

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7220pF @ 25V

Turn On Delay Time :

32 ns

Drain-source On Resistance-Max :

0.019Ohm

Factory Lead Time :

36 Weeks

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

104A

DS Breakdown Voltage-Min :

200V

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Published :

2012

Pin Count :

14

Rise Time :

64ns

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Fall Time (Typ) :

116 ns

JESD-609 Code :

e1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

SP4

Packaging :

Bulk