APTM20HM10FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Factory Lead Time :

36 Weeks

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

175A

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

12

Drain-source On Resistance-Max :

0.012Ohm

Vgs(th) (Max) @ Id :

5V @ 5mA

Power Dissipation :

694W

Fall Time (Typ) :

99 ns

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

FET Type :

4 N-Channel (H-Bridge)

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Published :

2012

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

56ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

694W

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

Isolated

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

4

FET Feature :

Standard

Turn-Off Delay Time :

81 ns

Package / Case :

SP6

RoHS Status :

RoHS Compliant

Number of Pins :

6

Mount :

Chassis Mount, Screw

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Chassis Mount

Turn On Delay Time :

28 ns

Pulsed Drain Current-Max (IDM) :

700A

Terminal Position :

UPPER

JESD-30 Code :

R-XUFM-X12

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Pin Count :

12