APTM20HM08FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

208A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Number of Terminations :

12

JESD-30 Code :

R-XUFM-X12

Avalanche Energy Rating (Eas) :

3000 mJ

Qualification Status :

Not Qualified

Rise Time :

64ns

Power Dissipation :

781W

Mount :

Chassis Mount, Screw

Packaging :

Bulk

Drain-source On Resistance-Max :

0.01Ohm

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Turn-Off Delay Time :

88 ns

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Pins :

6

Package / Case :

SP6

Operating Temperature :

-40°C~150°C TJ

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

10m Ω @ 104A, 10V

Factory Lead Time :

36 Weeks

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200V

Turn On Delay Time :

32 ns

FET Type :

4 N-Channel (H-Bridge)

Vgs(th) (Max) @ Id :

5V @ 5mA

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Fall Time (Typ) :

116 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

832A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Pin Count :

12

RoHS Status :

RoHS Compliant

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

4

Case Connection :

Isolated

Max Power Dissipation :

781W