APTM20DUM04G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

7

Mount :

Chassis Mount, Screw

RoHS Status :

RoHS Compliant

Power - Max :

1250W

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Fall Time (Typ) :

116 ns

FET Feature :

Standard

Drain-source On Resistance-Max :

0.005ohm

Turn On Delay Time :

32 ns

Package / Case :

SP6

Operating Temperature :

-40°C~150°C TJ

JESD-609 Code :

e1

Power Dissipation :

1.25kW

Published :

2012

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

1488A

Rds On (Max) @ Id, Vgs :

5m Ω @ 186A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

28900pF @ 25V

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X7

Turn-Off Delay Time :

88 ns

Packaging :

Bulk

Pin Count :

7

Terminal Form :

UNSPECIFIED

Number of Pins :

6

Transistor Application :

SWITCHING

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Avalanche Energy Rating (Eas) :

3000 mJ

Continuous Drain Current (ID) :

372A

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.25kW

Terminal Position :

UPPER

Pbfree Code :

yes

Case Connection :

Isolated

Rise Time :

64ns

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

5V @ 10mA

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE