APTM20DHM20TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Configuration :

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

14

ECCN Code :

EAR99

Number of Elements :

2

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

2500 mJ

Packaging :

Bulk

Pin Count :

14

Mounting Type :

Chassis Mount

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Asymmetrical

Continuous Drain Current (ID) :

89A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Package / Case :

SP4

Terminal Form :

UNSPECIFIED

Power - Max :

357W

Input Capacitance (Ciss) (Max) @ Vds :

6850pF @ 25V

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

24m Ω @ 44.5A, 10V

Max Power Dissipation :

357W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

FET Feature :

Standard

DS Breakdown Voltage-Min :

200V

Pulsed Drain Current-Max (IDM) :

356A

Mount :

Chassis Mount