APTM20DHM10G
- Mfr.Part #
- APTM20DHM10G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 200V 175A SP6
- Stock
- 46,503
- In Stock :
- 46,503
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Pin Count :
- 8
- Number of Pins :
- 6
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 87.5A, 10V
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -40°C~150°C TJ
- Published :
- 2016
- Packaging :
- Bulk
- Max Power Dissipation :
- 694W
- Terminal Position :
- UPPER
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- ECCN Code :
- EAR99
- Mount :
- Chassis Mount, Screw
- Package / Case :
- SP6
- FET Feature :
- Standard
- Case Connection :
- Isolated
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 2
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-XUFM-X8
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 700A
- Power Dissipation :
- 694W
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Terminal Form :
- UNSPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 175A
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Datasheets
- APTM20DHM10G
APTM20DHM10G Documents
APTM20DHM10G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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