APTM20DHM10G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

8

Max Power Dissipation :

694W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-XUFM-X8

Pin Count :

8

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Power Dissipation :

694W

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

175A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 5mA

FET Type :

2 N-Channel (Dual) Asymmetrical

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

700A

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Number of Pins :

6

Reach Compliance Code :

Unknown

Number of Elements :

2

Package / Case :

SP6

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Packaging :

Bulk

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw