APTM20DHM08G
- Mfr.Part #
- APTM20DHM08G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 200V 208A SP6
- Stock
- 33,218
- In Stock :
- 33,218
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.01Ohm
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 208A
- Case Connection :
- Isolated
- JESD-30 Code :
- R-XUFM-X8
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 104A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- TIN SILVER COPPER
- Number of Elements :
- 2
- Turn-Off Delay Time :
- 88 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 781W
- Max Power Dissipation :
- 781W
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Drain to Source Voltage (Vdss) :
- 200V
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- Published :
- 2012
- Number of Terminations :
- 8
- Turn On Delay Time :
- 32 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Mount :
- Chassis Mount, Screw
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Package / Case :
- SP6
- Factory Lead Time :
- 22 Weeks
- FET Feature :
- Standard
- Terminal Form :
- UNSPECIFIED
- Rise Time :
- 64ns
- JESD-609 Code :
- e1
- Fall Time (Typ) :
- 116 ns
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Pbfree Code :
- yes
- Datasheets
- APTM20DHM08G
APTM20DHM08G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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