APTM20AM10STG
- Mfr.Part #
- APTM20AM10STG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET 2N-CH 200V 175A SP4
- Stock
- 21,147
- In Stock :
- 21,147
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 81 ns
- Turn On Delay Time :
- 28 ns
- FET Feature :
- Standard
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 87.5A, 10V
- Package / Case :
- SP4
- Number of Terminations :
- 10
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- Mounting Type :
- Chassis Mount
- Mount :
- Chassis Mount, Screw
- Pin Count :
- 10
- Max Power Dissipation :
- 694W
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Pins :
- 4
- JESD-609 Code :
- e1
- Packaging :
- Bulk
- Fall Time (Typ) :
- 99 ns
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Continuous Drain Current (ID) :
- 175A
- JESD-30 Code :
- R-XUFM-X10
- Operating Temperature :
- -40°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 700A
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 2
- FET Type :
- 2 N-Channel (Half Bridge)
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Factory Lead Time :
- 36 Weeks
- ECCN Code :
- EAR99
- Published :
- 1999
- Power Dissipation :
- 694W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 56ns
- Datasheets
- APTM20AM10STG
APTM20AM10STG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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