APTM20AM08FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

3000 mJ

Turn-Off Delay Time :

88 ns

Package / Case :

SP4

Factory Lead Time :

36 Weeks

Rise Time :

64ns

ECCN Code :

EAR99

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Packaging :

Bulk

Turn On Delay Time :

32 ns

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

12

Drain-source On Resistance-Max :

0.01Ohm

Fall Time (Typ) :

116 ns

Number of Pins :

4

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

208A

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Case Connection :

Isolated

Pbfree Code :

yes

Radiation Hardening :

No

Power Dissipation :

781W

Published :

2012

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

10m Ω @ 104A, 10V

Number of Elements :

2

FET Type :

2 N-Channel (Half Bridge)

Pin Count :

12

Max Power Dissipation :

781W

Vgs(th) (Max) @ Id :

5V @ 5mA