APTM20AM06SG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Number of Terminations :

7

Vgs(th) (Max) @ Id :

5V @ 6mA

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 150A, 10V

Turn-Off Delay Time :

81 ns

Drain to Source Voltage (Vdss) :

200V

Avalanche Energy Rating (Eas) :

1300 mJ

FET Feature :

Standard

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Rise Time :

56ns

Pbfree Code :

yes

Terminal Position :

UPPER

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn On Delay Time :

28 ns

Factory Lead Time :

36 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

18500pF @ 25V

Mounting Type :

Chassis Mount

Pin Count :

7

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

99 ns

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Power - Max :

1250W

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

300A

Package / Case :

SP6

Power Dissipation :

1.25kW

JESD-30 Code :

R-XUFM-X7

Max Power Dissipation :

1.25kW

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1