APTM20AM05FTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

333A

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

5m Ω @ 166.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4V @ 8mA

Operating Temperature :

-40°C~150°C TJ

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

1300 mJ

Mounting Type :

Chassis Mount

Number of Terminations :

15

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

1184nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Drain-source On Resistance-Max :

0.005ohm

Input Capacitance (Ciss) (Max) @ Vds :

40800pF @ 25V

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Number of Elements :

2

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

1250W

Pulsed Drain Current-Max (IDM) :

700A

FET Feature :

Standard

Transistor Application :

SWITCHING

Pin Count :

15

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Max Power Dissipation :

1.25kW

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount

Number of Pins :

4

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

JESD-30 Code :

R-XUFM-X15

Package / Case :

SP4

Additional Feature :

AVALANCHE RATED