APTM120TDU57PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

5155pF @ 25V

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Fall Time (Typ) :

45 ns

Rise Time :

15ns

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

160 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

20 ns

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 2.5mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

17A

FET Feature :

Standard

DS Breakdown Voltage-Min :

1200V

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.57Ohm

Additional Feature :

AVALANCHE RATED

Number of Pins :

6

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

684m Ω @ 8.5A, 10V

Number of Terminations :

21

Number of Elements :

6

Mounting Type :

Chassis Mount

JESD-30 Code :

R-XUFM-X21

FET Type :

6 N-Channel (3-Phase Bridge)

Package / Case :

SP6

Terminal Form :

UNSPECIFIED

Pin Count :

21

Max Power Dissipation :

390W

Power Dissipation :

390W

RoHS Status :

RoHS Compliant