APTM120TA57FPG
- Mfr.Part #
- APTM120TA57FPG
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 6N-CH 1200V 17A SP6-P
- Stock
- 35,296
- In Stock :
- 35,296
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- TIN SILVER COPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2016
- Number of Pins :
- 6
- Power Dissipation :
- 390W
- Number of Terminations :
- 21
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Package / Case :
- SP6
- Continuous Drain Current (ID) :
- 17A
- Operating Temperature :
- -40°C~150°C TJ
- Pin Count :
- 21
- Mount :
- Chassis Mount, Screw
- Drain to Source Voltage (Vdss) :
- 1200V 1.2kV
- DS Breakdown Voltage-Min :
- 1200V
- FET Type :
- 6 N-Channel (3-Phase Bridge)
- Rds On (Max) @ Id, Vgs :
- 684m Ω @ 8.5A, 10V
- FET Feature :
- Standard
- Input Capacitance (Ciss) (Max) @ Vds :
- 5155pF @ 25V
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 6
- Gate to Source Voltage (Vgs) :
- 30V
- Max Power Dissipation :
- 390W
- Terminal Position :
- UPPER
- Configuration :
- 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- JESD-30 Code :
- R-XUFM-X21
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 187nC @ 10V
- Datasheets
- APTM120TA57FPG
APTM120TA57FPG Documents

APTM120TA57FPG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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