APTM120H57FTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

4

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

1200V

Additional Feature :

AVALANCHE RATED

Power Dissipation :

390W

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Pin Count :

14

Mounting Type :

Chassis Mount

Published :

2016

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Max Power Dissipation :

390W

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Rds On (Max) @ Id, Vgs :

684m Ω @ 8.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5155pF @ 25V

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

17A

Qualification Status :

Not Qualified

Number of Terminations :

14

FET Feature :

Standard

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP4

Transistor Application :

SWITCHING

Number of Pins :

4

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

68A

FET Type :

4 N-Channel (H-Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown