APTM120H57FT3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

4 N-Channel (H-Bridge)

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

Rds On (Max) @ Id, Vgs :

684m Ω @ 8.5A, 10V

Number of Pins :

3

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Elements :

4

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

68A

Power Dissipation :

390W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

25

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

17A

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

1200V

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Configuration :

COMPLEX

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2016

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

AVALANCHE RATED

Package / Case :

SP3

JESD-609 Code :

e1

Mount :

Chassis Mount, Screw

Max Power Dissipation :

390W

JESD-30 Code :

R-XUFM-X25

Input Capacitance (Ciss) (Max) @ Vds :

5155pF @ 25V

Terminal Form :

UNSPECIFIED

Number of Terminations :

25

Transistor Element Material :

SILICON