APTM120H29FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Mounting Type :

Chassis Mount

Power Dissipation :

780W

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Turn On Delay Time :

20 ns

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

348m Ω @ 17A, 10V

Terminal Position :

UPPER

Fall Time (Typ) :

45 ns

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pin Count :

12

Factory Lead Time :

36 Weeks

Avalanche Energy Rating (Eas) :

3000 mJ

DS Breakdown Voltage-Min :

1200V

Number of Pins :

6

Number of Elements :

4

Vgs(th) (Max) @ Id :

5V @ 5mA

Packaging :

Bulk

Published :

2012

Pbfree Code :

yes

JESD-30 Code :

R-XUFM-X12

Turn-Off Delay Time :

160 ns

Package / Case :

SP6

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Series :

POWER MOS 7®

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

FET Feature :

Standard

Terminal Form :

UNSPECIFIED

FET Type :

4 N-Channel (H-Bridge)

Number of Terminations :

12

Gate Charge (Qg) (Max) @ Vgs :

374nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

780W

Continuous Drain Current (ID) :

34A

ECCN Code :

EAR99