APTM120H140FT1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

8A

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

30V

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Power Dissipation :

208W

Number of Elements :

4

JESD-609 Code :

e1

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Configuration :

COMPLEX

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Mounting Type :

Chassis Mount

Rise Time :

15ns

Pulsed Drain Current-Max (IDM) :

50A

Number of Pins :

1

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Turn On Delay Time :

26 ns

Number of Terminations :

12

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

FET Type :

4 N-Channel (H-Bridge)

Pbfree Code :

yes

Factory Lead Time :

36 Weeks

Fall Time (Typ) :

24 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

3812pF @ 25V

Terminal Position :

UPPER

FET Feature :

Standard

Pin Count :

12

Max Power Dissipation :

208W

Rds On (Max) @ Id, Vgs :

1.68 Ω @ 7A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Package / Case :

SP1

Turn-Off Delay Time :

85 ns

Terminal Finish :

TIN SILVER COPPER