APTM120DU29TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

5V @ 5mA

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Transistor Application :

SWITCHING

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

348m Ω @ 17A, 10V

Number of Terminations :

12

Gate Charge (Qg) (Max) @ Vgs :

374nC @ 10V

Pulsed Drain Current-Max (IDM) :

136A

Reach Compliance Code :

Unknown

Pin Count :

12

Power Dissipation :

780W

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Package / Case :

SP4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

780W

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

34A

Number of Pins :

4

Published :

2016

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED