APTM120DU15G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

5V @ 10mA

Radiation Hardening :

No

Pbfree Code :

yes

Turn On Delay Time :

20 ns

JESD-30 Code :

R-XUFM-X7

Turn-Off Delay Time :

160 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

7

Case Connection :

Isolated

Power Dissipation :

1.25kW

Power - Max :

1250W

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Published :

2012

Fall Time (Typ) :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

20600pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

748nC @ 10V

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Drain-source On Resistance-Max :

0.175Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Position :

UPPER

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Factory Lead Time :

36 Weeks

Rise Time :

15ns

Continuous Drain Current (ID) :

60A

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-40°C~150°C TJ

FET Feature :

Standard

Pin Count :

7

Package / Case :

SP6

Max Power Dissipation :

1.25kW

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

175m Ω @ 30A, 10V

Number of Pins :

6

Terminal Finish :

TIN SILVER COPPER

Drain to Source Voltage (Vdss) :

1200V 1.2kV