APTM120DDA57T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

17A

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

Max Power Dissipation :

390W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

390W

Max Operating Temperature :

150°C

Turn-Off Delay Time :

160 ns

Supplier Device Package :

SP3

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

684mOhm @ 8.5A, 10V

Turn On Delay Time :

20 ns

Rds On Max :

684 mΩ

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Fall Time (Typ) :

45 ns

FET Type :

2 N-Channel (Dual)

Packaging :

Bulk

Min Operating Temperature :

-40°C

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

5155pF @ 25V

Input Capacitance :

5.155nF

Power Dissipation :

390W

FET Feature :

Standard

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Continuous Drain Current (ID) :

17A

Mount :

Chassis Mount, Screw

Number of Pins :

3

Mounting Type :

Chassis Mount

Published :

2006

RoHS Status :

RoHS Compliant

Package / Case :

SP3