APTM120A80FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.96Ohm

JESD-609 Code :

e1

FET Type :

2 N-Channel (Half Bridge)

Max Power Dissipation :

357W

Input Capacitance (Ciss) (Max) @ Vds :

6696pF @ 25V

Package / Case :

SP1

Qualification Status :

Not Qualified

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

90A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Number of Terminations :

12

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

Power Dissipation :

357W

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

14A

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Case Connection :

Isolated

Mounting Type :

Chassis Mount

Rds On (Max) @ Id, Vgs :

960m Ω @ 12A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Published :

2007

RoHS Status :

RoHS Compliant

Number of Pins :

1

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Chassis Mount, Screw

Pin Count :

12