APTM120A29FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Turn-Off Delay Time :

160 ns

Fall Time (Typ) :

45 ns

Pin Count :

12

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

2 N-Channel (Half Bridge)

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

780W

Number of Terminations :

12

Number of Pins :

4

Case Connection :

Isolated

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Package / Case :

SP4

Additional Feature :

AVALANCHE RATED

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Number of Elements :

2

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

374nC @ 10V

JESD-609 Code :

e1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

136A

Factory Lead Time :

36 Weeks

Rds On (Max) @ Id, Vgs :

348m Ω @ 17A, 10V

Packaging :

Bulk

Turn On Delay Time :

20 ns

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 5mA

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Max Power Dissipation :

780W

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Continuous Drain Current (ID) :

34A