APTM120A20SG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Published :

1999

Pin Count :

7

Rise Time :

10ns

Input Capacitance (Ciss) (Max) @ Vds :

15200pF @ 25V

Number of Pins :

6

Transistor Element Material :

SILICON

Max Power Dissipation :

1.25kW

Number of Elements :

2

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

36 ns

ECCN Code :

EAR99

Package / Case :

SP6

RoHS Status :

RoHS Compliant

Power Dissipation :

1.25kW

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

600nC @ 10V

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XUFM-X7

Additional Feature :

AVALANCHE RATED

Number of Terminations :

7

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Power - Max :

1250W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

240m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 6mA

Turn-Off Delay Time :

68 ns

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

1300 mJ

Packaging :

Bulk

FET Feature :

Standard

Terminal Position :

UPPER

Turn On Delay Time :

10 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

50A