APTM120A20DG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Power - Max :

1250W

Max Power Dissipation :

1.25kW

Power Dissipation :

1.25kW

Continuous Drain Current (ID) :

50A

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

JESD-30 Code :

R-XUFM-X7

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

36 Weeks

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

36 ns

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

1300 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1999

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

15200pF @ 25V

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

7

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

68 ns

Gate Charge (Qg) (Max) @ Vgs :

600nC @ 10V

Number of Pins :

6

Package / Case :

SP6

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

240m Ω @ 25A, 10V

JESD-609 Code :

e1

FET Type :

2 N-Channel (Half Bridge)

Number of Elements :

2

Vgs(th) (Max) @ Id :

5V @ 6mA

FET Feature :

Standard

Case Connection :

Isolated

Transistor Element Material :

SILICON

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Pin Count :

7