APTM10TDUM19PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

300A

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Number of Terminations :

21

Transistor Element Material :

SILICON

Package / Case :

SP6

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation :

208W

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

70A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

21

Number of Pins :

6

Mount :

Chassis Mount, Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-XUFM-X21

Transistor Application :

SWITCHING

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

6 N-Channel (3-Phase Bridge)

Number of Elements :

6

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.021Ohm

Max Power Dissipation :

208W