APTM10TDUM19PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Power Dissipation :

208W

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SP6

RoHS Status :

RoHS Compliant

FET Type :

6 N-Channel (3-Phase Bridge)

JESD-609 Code :

e1

Pin Count :

21

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Drain-source On Resistance-Max :

0.021Ohm

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Case Connection :

Isolated

FET Feature :

Standard

Mount :

Chassis Mount, Screw

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

21

JESD-30 Code :

R-XUFM-X21

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Avalanche Energy Rating (Eas) :

1500 mJ

Continuous Drain Current (ID) :

70A

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

300A

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Reach Compliance Code :

Unknown

Number of Elements :

6

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Power Dissipation :

208W

Transistor Element Material :

SILICON