APTM10TDUM09PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Factory Lead Time :

22 Weeks

Power Dissipation :

390W

Number of Pins :

6

Case Connection :

Isolated

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

UPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

390W

Drain-source On Resistance-Max :

0.01Ohm

JESD-609 Code :

e1

Radiation Hardening :

No

JESD-30 Code :

R-XUFM-X21

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

Turn-Off Delay Time :

95 ns

Avalanche Energy Rating (Eas) :

3000 mJ

Rise Time :

70ns

Number of Terminations :

21

FET Type :

6 N-Channel (3-Phase Bridge)

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Published :

2012

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

125 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

Package / Case :

SP6

Terminal Form :

UNSPECIFIED

Pin Count :

21

FET Feature :

Standard

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

139A

Mount :

Chassis Mount, Screw

Pulsed Drain Current-Max (IDM) :

430A

Number of Elements :

6

Turn On Delay Time :

35 ns

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount