APTM10TAM19FPG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Terminal Finish :

TIN SILVER COPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

100V

FET Feature :

Standard

Fall Time (Typ) :

125 ns

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X21

Packaging :

Bulk

Mounting Type :

Chassis Mount

Turn On Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Published :

2012

Mount :

Chassis Mount, Screw

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time :

70ns

Package / Case :

SP6

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

6

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

208W

Operating Temperature :

-40°C~150°C TJ

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

1500 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

6 N-Channel (3-Phase Bridge)

Number of Terminations :

21

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Continuous Drain Current (ID) :

70A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Drain-source On Resistance-Max :

0.021Ohm

Turn-Off Delay Time :

95 ns

Pin Count :

21

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

300A

Max Power Dissipation :

208W

Terminal Form :

UNSPECIFIED