APTM10HM19FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

11.5mm

Terminal Form :

UNSPECIFIED

Number of Elements :

4

Continuous Drain Current (ID) :

70A

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

3

FET Type :

4 N-Channel (H-Bridge)

ECCN Code :

EAR99

Turn On Delay Time :

35 ns

Pin Count :

25

Case Connection :

Isolated

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Package / Case :

SP3

JESD-30 Code :

R-XUFM-X25

Pbfree Code :

yes

Power Dissipation :

208W

Published :

2006

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

FET Feature :

Standard

Mount :

Chassis Mount, Screw

Fall Time (Typ) :

125 ns

Width :

40.8mm

Rise Time :

70ns

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

25

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Max Power Dissipation :

208W

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Length :

73.4mm

Element Configuration :

Single

Turn-Off Delay Time :

95 ns