APTM10HM09FTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

4 N-Channel (H-Bridge)

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Number of Terminations :

14

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Package / Case :

SP4

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Mounting Type :

Chassis Mount

Max Power Dissipation :

390W

DS Breakdown Voltage-Min :

100V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.01Ohm

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Published :

2016

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Pin Count :

14

Number of Elements :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Continuous Drain Current (ID) :

139A

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Number of Pins :

4

Power Dissipation :

390W

Vgs(th) (Max) @ Id :

4V @ 2.5mA