APTM10HM09FTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

390W

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

JESD-609 Code :

e1

FET Type :

4 N-Channel (H-Bridge)

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Mounting Type :

Chassis Mount

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

14

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Continuous Drain Current (ID) :

139A

Number of Pins :

4

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

FET Feature :

Standard

Package / Case :

SP4

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk

Max Power Dissipation :

390W

Terminal Finish :

TIN SILVER COPPER

Pin Count :

14

Drain-source On Resistance-Max :

0.01Ohm

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Number of Elements :

4

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V