APTM10HM05FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.005ohm

Transistor Element Material :

SILICON

Package / Case :

SP6

Terminal Position :

UPPER

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Terminations :

12

Packaging :

Bulk

Number of Elements :

4

Continuous Drain Current (ID) :

278A

Published :

2012

Mounting Type :

Chassis Mount

Number of Pins :

12

Power Dissipation :

780W

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Terminal Form :

UNSPECIFIED

Turn-Off Delay Time :

280 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

ECCN Code :

EAR99

FET Type :

4 N-Channel (H-Bridge)

Case Connection :

Isolated

Rise Time :

165ns

Max Power Dissipation :

780W

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Pin Count :

12

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

36 Weeks

Pbfree Code :

yes

Turn On Delay Time :

80 ns

Fall Time (Typ) :

135 ns

Mount :

Chassis Mount, Screw

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

1100A

Vgs(th) (Max) @ Id :

4V @ 5mA

Terminal Finish :

TIN SILVER COPPER