APTM10DUM05TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Avalanche Energy Rating (Eas) :

3000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

Number of Terminations :

4

Mount :

Chassis Mount, Screw

Additional Feature :

AVALANCHE RATED

Pin Count :

12

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.005ohm

Package / Case :

SP4

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

278A

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

1100A

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Max Power Dissipation :

780W

Number of Elements :

2

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 5mA

Qualification Status :

Not Qualified

Power Dissipation :

780W

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

4

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk