APTM10DUM02G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

500 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Elements :

2

Turn On Delay Time :

160 ns

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Package / Case :

SP6

Continuous Drain Current (ID) :

495A

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-30 Code :

R-XUFM-X7

Number of Terminations :

7

ECCN Code :

EAR99

Pin Count :

7

Vgs(th) (Max) @ Id :

4V @ 10mA

Rise Time :

240ns

Fall Time (Typ) :

160 ns

Mount :

Chassis Mount, Screw

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Max Power Dissipation :

1.25kW

DS Breakdown Voltage-Min :

100V

Published :

2012

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Power - Max :

1250W

Power Dissipation :

1.25kW

Gate Charge (Qg) (Max) @ Vgs :

1360nC @ 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 200A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Number of Pins :

6

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk

Transistor Application :

SWITCHING

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

1900A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)