APTM10DUM02G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

TIN SILVER COPPER

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

7

FET Type :

2 N-Channel (Dual)

Package / Case :

SP6

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

1360nC @ 10V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 200A, 10V

Max Power Dissipation :

1.25kW

Transistor Application :

SWITCHING

Number of Elements :

2

Power Dissipation :

1.25kW

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Avalanche Energy Rating (Eas) :

3000 mJ

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

Fall Time (Typ) :

160 ns

Pin Count :

7

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Published :

2012

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Continuous Drain Current (ID) :

495A

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

4V @ 10mA

Terminal Position :

UPPER

Turn-Off Delay Time :

500 ns

Power - Max :

1250W

Case Connection :

Isolated

Transistor Element Material :

SILICON

Rise Time :

240ns

Pulsed Drain Current-Max (IDM) :

1900A

Turn On Delay Time :

160 ns

Packaging :

Bulk

Radiation Hardening :

No

JESD-30 Code :

R-XUFM-X7

Number of Pins :

6

JESD-609 Code :

e1